AOD422, AOD422l symbol v ds v gs i dm i ar e ar t j , t stg symbol ty p max 16.7 25 40 50 r jl 1.9 2.5 maximum junction-to-case c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w v v 8 gate-source voltage drain-source voltage 20 a maximum units parameter absolute maximum ratings t a =25c unless otherwise noted t c =100c 10 pulsed drain current c 30 continuous drain current g t c =25c i d 10 avalanche current c 15 a repetitive avalanche energy l=0.1mh c 26 mj w t a =70c 1.6 power dissipation b t c =25c p d 50 junction and storage temperature range -55 to 150 c w t c =100c 20 power dissipation a t a =25c p dsm 2.5 features v ds (v) = 20v i d = 10 a r ds(on) < 22m ? (v gs = 4.5v) r ds(on) < 26m ? (v gs = 2.5v) r ds(on) < 34m ? (v gs = 1.8v) esd rating: 2000v hbm the AOD422 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitable for use as a load switch or in pwm applications. it is esd protected. AOD422l (green product) is offered in a lead free package. d s g g d s t o-252 d - pak t o p view drain connected to t ab effect transistor n-channel enhancement mode field general description www.freescale.net.cn 1 / 4
AOD422, AOD422l symbol min typ max units bv dss 20 v 1 t j =55c 5 1 a 10 a v gs(th) 0.4 0.6 1 v i d(on) 30 a 18 22 t j =125c 25 31 21 26 m ? 26 34 m ? g fs 30 s v sd 0.76 1 v i s 10 a c iss 1160 pf c oss 187 pf c rss 146 pf r g 1.5 ? q g 16 nc q gs 0.8 nc q gd 3.8 nc t d(on) 6.2 ns t r 12.7 ns t d(off) 51.7 ns t f 16 ns t rr 17.6 ns q rr 6.5 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice body diode reverse recovery time body diode reverse recovery charge i f =10a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =4.5v, v ds =5v v gs =4.5v, i d =10a reverse transfer capacitance i f =10a, di/dt=100a/ s electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =250 a v ds =16v, v gs =0v zero gate voltage drain current i gss gate-body leakage current v ds =0v, v gs =4.5v r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m ? v gs =2.5v, i d =8a i s =1a,v gs =0v v ds =5v, i d =10a v gs =1.8v, i d =5a turn-on rise time turn-off delaytime v gs =5v, v ds =10v, r l =1 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time switching parameters total gate charge v gs =4.5v, v ds =10v, i d =10a gate source charge turn-on delaytime dynamic parameters v gs =0v, v ds =10v, f=1mhz gate drain charge v ds =0v, v gs =8v maximum body-diode continuous current g input capacitance output capacitance a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150c. the value in any a given application depends on the user's specific board design, and the maximum temperature of 150c may be used if the pcb allows it to. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c: repetitive rating, pulse width limited by junction temperature t j(max) =150c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. g. the maximum current rating is limited by bond-wires. www.freescale.net.cn 2 / 4
AOD422, AOD422l typical electrical and thermal characteristics 0 10 20 30 012345 v ds (volts) figure 1: on-regions characteristi cs i d (a) v gs =1v v gs =1.5v v gs =2v 8v 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 2.5 v gs (volts) figure 2: transfer characteristics i d (a) 25c 125c v gs =5v 10 20 30 40 0 5 10 15 20 i d( a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) v gs =4.5v v gs =2.5v v gs =1.8v 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalize on-resistance v gs =4.5v i d =10a v gs =1.8v i d =5a v gs =2.5v i d =8a 10 20 30 40 50 60 02468 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c i d =10a 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c www.freescale.net.cn 3 / 4
AOD422, AOD422l typical electrical and thermal characteristics 0 1 2 3 4 5 0 5 10 15 20 qg (nc) figure 7: gate-charge characteristics v gs (volt s) v ds =10v i d =10a 0 400 800 1200 1600 2000 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf ) c iss c rss c oss 0 10 20 30 40 50 60 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to-ambient (note e) power (w) t j(max) =150c t a =25c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance t on t p d d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =50c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0 .1 s 1s 1 0s d c r ds(on) limited t j(max) =150c t a =25c 10 s www.freescale.net.cn 4 / 4
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